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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBR941B UHF wideband transistor
Preliminary specification 2001 Jan 18
Philips Semiconductors
Preliminary specification
UHF wideband transistor
FEATURES * Small size * Low noise * Low distortion * High gain * Gold metallization ensures excellent reliability. APPLICATIONS * Communication and instrumentation systems. DESCRIPTION
1 2
MSB003
PBR941B
PINNING SOT23 PIN 1 2 3 base emitter collector DESCRIPTION
handbook, halfpage
3
Silicon NPN transistor in a surface mount 3-pin SOT23 package. The transistor is primarily intended for wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners.
Top view
Marking code: LBp
Fig.1 Simplified outline (SOT23).
QUICK REFERENCE DATA SYMBOL Cre fT GUM NF Ptot Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER feedback capacitance transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz Ts = 60 C; note 1 MIN. - 7 - - - - TYP. 0.3 9 16 1.5 - - MAX. - - - 2.5 360 320 UNIT pF GHz dB dB mW K/W
2001 Jan 18
2
Philips Semiconductors
Preliminary specification
UHF wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature Ts = 60 C; note 1 open emitter open base open collector CONDITIONS MIN. - - - - - - -65 -
PBR941B
MAX. 20 10 1.5 50 50 360 +150 150
UNIT V V V mA mA mW C C
VALUE 320
UNIT K/W
2001 Jan 18
3
Philips Semiconductors
Preliminary specification
UHF wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL DC characteristics V(BR)CBO V(BR)CEO V(BR)EBO VBEF ICBO IEBO hFE collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage forward base-emitter voltage collector-base leakage current emitter-base leakage current DC current gain IC = 100 A; IE = 0 IC = 100 A; IB = 0 IE = 10 A; IC = 0 IE = 25 mA VCB = 10 V; IE = 0 VEB = 1 V; IC = 0 IC = 5 mA; VCE = 6 V IC = 15 mA; VCE = 6 V AC characteristics Cre fT |s21|2 GUM feedback capacitance transition frequency insertion gain maximum unilateral power gain; note 1 IC = 0; VCB = 6 V; f = 1 MHz IC = 15 mA; VCE = 6 V; fm = 1 GHz IC = 15 mA; VCE = 6 V; f = 1 GHz IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 1 GHz IC = 15 mA; VCE = 6 V; Tamb = 25 C; f = 2 GHz NF noise figure S = opt; IC = 5 mA; VCE = 6 V; f = 1 GHz S = opt; IC = 5 mA; VCE = 6 V; f = 2 GHz Note - 7 13 - - - - 0.3 9 15 16 10 1.5 2.1 20 10 1.5 - - - 100 - - - - - - - 150 150 PARAMETER CONDITIONS MIN. TYP.
PBR941B
MAX. - - - 1.05 100 100 200 - - - - - - 2.5 -
UNIT
V V V V nA nA
pF GHz dB dB dB dB dB
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------- dB ( 1 - s 11 2 ) ( 1 - s 22 2 )
2001 Jan 18
4
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, halfpage
400
MDA871
handbook, halfpage
160
MCD974
Ptot (mW) 300
hFE 120
200
70
100
40
0 0 50 100 150 Ts (C) 200
0 0 10 20 30 40 50 IC (mA)
VCE = 6 V.
Fig.2
Power derating as a function of soldering point temperature.
Fig.3
DC current gain as a function of collector current; typical values.
MGS498
handbook, halfpage
0.5
Cre (pF)
handbook, halfpage
10
MCD975
fT (GHz) 8
0.4
0.3
6
0.2
4
0.1
2
0 0 4 8 VCB (V) 12
0 0 10 20 30 40 50 IC (mA)
I C = Ic = 0; f = 1 MHz.
VCE = 6 V; fm = 1 GHz; Tamb = 25 C.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current; typical values.
2001 Jan 18
5
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
MGS500
handbook, halfpage
20
gain (dB) 16
MSG
handbook, halfpage
50
MGS501
Gmax GUM
gain (dB) 40 GUM
12
30 MSG
8
20 Gmax
4
10
0 0 10 20 30 I C (mA) 40
0 102
103
f (MHz)
104
f = 1 GHz; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.
I C = 5 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of frequency; typical values.
handbook, halfpage
50
MGR502
handbook, halfpage
50
MGS503
gain (dB) 40 GUM 30
gain (dB) 40
MSG
30
MSG GUM
20 Gmax 10
20 Gmax 10
0 102
103
f (MHz)
104
0 102
103
f (MHz)
104
I C = 15 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.
I C = 30 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.
Fig.8
Gain as a function of frequency; typical values.
Fig.9
Gain as a function of frequency; typical values.
2001 Jan 18
6
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, halfpage
4
MGS504
handbook, halfpage
4
MGS505
NF (dB) 3
NF (dB) 3
(1)
(2) (1)
2
(2) (3) (4) (5) (6)
2
(3)
1
1
0 10-1
1
10
IC (mA)
102
0 102
103
f (MHz)
104
VCE = 6 V. (1) f = 2 GHz. (2) f = 1.5 GHz. (3) f = 1 GHz. (4) f = 900 MHz. (5) f = 800 MHz. (6) f = 500 MHz.
VCE = 6 V. (1) IC = 30 mA. (2) IC = 15 mA. (3) IC = 5 mA.
Fig.10 Minimum noise figure as a function of collector current; typical values.
Fig.11 Minimum noise figure as a function of frequency; typical values.
2001 Jan 18
7
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, full pagewidth
unstable region source
90 +1
unstable region load 1.0 45 0.8 0.6 0.4 0.2
135
+ 0.5
+2
+ 0.2
(1)
opt 0.5
(2) (3) (5) (6)
+5
180
0
1
2 (4)
5
0
0
f = 1 GHz; VCE = 6 V; I C = 5 mA; Zo = 50 . (1) G = 17 dB. (2) G = 16 dB. (3) G = 15 dB. (4) NF = 1.6 dB. (5) NF = 1.8 dB. (6) NF = 2 dB.
- 0.2
-5
- 0.5 -135 -1
-2
- 45 1.0
- 90
MGS506
Fig.12 Common emitter available gain, noise and stability circles; typical values.
handbook, full pagewidth
90 unstable region source 135 + 0.5 +1 +2
unstable region load 1.0 45 0.8 0.6 0.4 0.2 2 5 0 0
+ 0.2 opt
(1)
+5
180
0
0.5
(5) (6) (2) (7)
1
0.2
f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . (1) Gmax = 10.9 dB. (2) G = 10 dB. (3) G = 9 dB. (4) G = 8 dB. (5) NF = 2.1 dB. (6) NF = 2.3 dB. (7) NF = 2.5 dB.
- 0.2
(3) (4)
-5
- 0.5 -135 -1
-2
- 45 1.0
- 90
MGS507
Fig.13 Common emitter available gain, noise and stability circles; typical values.
2001 Jan 18
8
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, full pagewidth
90 +1 135 + 0.5 +2 45 1.0 0.8 0.6 0.4 0.2 2 5 0 0
+ 0.2 3 GHz 180 0 0.2 0.5 1 2 GHz 1 GHz - 0.2 500 MHz 200 MHz - 0.5 -135 -1 100 MHz
+5
-5
-2
- 45 1.0
- 90
VCE = 6 V; IC = 15 mA; Zo = 50 .
MGS508
Fig.14 Common emitter input reflection coefficient (s 11); typical values.
handbook, full pagewidth
90
135
45
200 MHz 100 MHz 180 500 MHz 1 GHz 2 GHz 3 GHz 10
50
40
30
20
0
-135
- 45
- 90
VCE = 6 V; IC = 15 mA.
MGS509
Fig.15 Common emitter forward transmission coefficient (s21); typical values.
2001 Jan 18
9
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PBR941B
handbook, full pagewidth
90
135
45
3 GHz 2 GHz 1 GHz 500 MHz 200 MHz 100 MHz
180 0.5
0.4
0.3
0.2
0.1
0
-135
- 45
- 90
VCE = 6 V; IC = 15 mA.
MGS510
Fig.16 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 +1 135 + 0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 1 2 5 0 0
+ 0.2
+5
- 0.2
1 GHz 500 MHz 2 GHz 100 MHz 3 GHz 200 MHz - 5
- 0.5 -135 -1
-2
- 45 1.0
- 90
VCE = 6 V; IC = 15 mA; Zo = 50 .
MGS511
Fig.17 Common emitter output reflection coefficient (s22); typical values.
2001 Jan 18
10
Philips Semiconductors
Preliminary specification
UHF wideband transistor
PACKAGE OUTLINE
PBR941B
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2001 Jan 18
11
Philips Semiconductors
Preliminary specification
UHF wideband transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
PBR941B
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 Jan 18
12
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SCA 71
Printed in The Netherlands
603508/03/pp13
Date of release: 2001
Jan 18
Document order number:
9397 750 07945

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